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50P06DMOSFET Series

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with lowgatecharge. It can be used in a wide variety of applications.

Features

VDS=-60V,ID=-50A,RDS(ON)<20mΩ@VGS=-10V

Low gate charge. 

Green device available. 

Advanced high cell denity trench technology for ultra Iow RDS(ON). Excellent package for good heat dissipation.

50P06DMOSFET Series parameter list

Type:

50A

Drain Current ID:

-60V

Withstand Voltage VDS:

24mΩ

On-Resistance RDS (0n):

±20V

VGS:

Package:

TO252-2L

Alternative:

Application Fields

• Power supply
• home appliance
• drone
• floor sweeper
• Medical device
• Multimedia audio power amplifier
• LED lighting
• Toy
• robot
• Instruments and meters
• industrial control
• Automotive Electronics

Production line live view

Direct supply from the original factory of domestic integrated circuits

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