
General Features
● VDS =30V,ID =50ARDS(ON) < 11mΩ @ VGS=10VRDS(ON) < 16mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible Power Supply
























































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Emailhttps://www.hsesf.net