Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features:
1) VDS=40V,ID=16A,RDS(ON)<16mΩ@VGS=10V(Typ:12mΩ)
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
6) MSL3
























































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